无锡固电半导体股份有限公司

SY*OL

PARAMETER

VALUE

UNIT

V_C*

Collector-Emitter Voltage V_BE= 0

450

V

V_CEO

Collector-Emitter Voltage

400

V

V_EBO

Emitter-Base Voltage

5

V

I_C

Collector Current

10

A

I_CM

Collector Current-peak

15

A

I_B

Base Current

5

A

P_C

Collector Power Dissipation

@T_C=25℃

105

W

T_j

Junction Temperature

150

℃

T_stg

StorageTemperature Range

-65~150

℃

SY*OL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance, Junction to Case

1.2

℃/W

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= 0.1A; I_B= 0

400

V

V_CE(sat)-1

Collector-Emitter Saturation Voltage

I_C= 5A; I_B= 50mA

1.8

V

V_CE(sat)-2

Collector-Emitter Saturation Voltage

I_C= 7A; I_B= 140mA

1.8

V

V_BE(sat)-1

Base-Emitter Saturation Voltage

I_C= 5A; I_B= 50mA

2.2

V

V_BE(sat)-2

Base-Emitter Saturation Voltage

I_C= 7A; I_B= 140mA

2.5

V

I_C*

Collector Cutoff Current

V_CE= 450V;V_BE= 0

V_CE= 450V;V_BE= 0;T_j= 125℃

0.25

0.5

mA

I_CEO

Collector Cutoff Current

V_CE= 400V; I_B= 0

0.25

mA

I_EBO

Emitter Cutoff Current

V_EB= 5V; I_C= 0

50

mA

V_ECF

C-E Diode Forward Voltage

I_F= 7A

2.5

V