- 非IC关键词
无锡固电ISC 供应BD912 三*管 达林顿三*管 增强型MOS管
是
ISC
BD912
功率
硅(Si)
PNP型
-20（A）
90（W）
3（MHz）
平面型
直插型
塑料封装
产品信息
供应BD912三*管TO-220,有意者请联系！
D*CRIPTION
·DC Current Gain -
: hFE= 40@IC= -0.5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -100V(Min)
·Complement to T*e BD911
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SY*OL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -100 | V |
VCEO | Collector-Emitter Voltage | -100 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -15 | A |
ICM | Collector Current-Peak | -20 | A |
IB | Base Current | -5 | A |
PC | Collector Power Dissipation @ TC=25℃ | 90 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -65~150 | ℃ |
ELE*RICAL CHARA*ERISTICS
TC=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | MAX | UNIT |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= -50mA ;IB= 0 | -100 |
| V |
VCE(sat)-1 | Collector-Emitter Saturation Voltage | IC= -5A; IB= -0.5A |
| -1.0 | V |
VCE(sat)-2 | Collector-Emitter Saturation Voltage | IC= -10A; IB= -2.5A |
| -3.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= -10A; IB= -2.5A |
| -2.5 | V |
VBE(on) | Base-Emitter On Voltage | IC= -5A ; VCE= -4V |
| -1.5 | V |
ICBO | Collector Cutoff Current | VCB= -100V;IE= 0 |
| -0.5 | mA |
ICEO | Collector Cutoff Current | VCE= -50V;IB= 0 |
| -1.0 | mA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
| -1.0 | mA |
hFE-1 | DC Current Gain | IC= -0.5A ; VCE= -4V | 40 | 250 |
|
hFE-2 | DC Current Gain | IC= -5A ; VCE= -4V | 15 | 150 |
|
hFE-3 | DC Current Gain | IC= -10A ; VCE= -4V | 5 |
|
|
fT | Current-Gain—Bandwidth Product | IC= -0.5A ; VCE= -4V; ftest= 1.0MHz | 3.0 |
| MHz |