- 非IC关键词
无锡固电ISC 供应2N6302 三*管 直插三*管 增强型MOS管
是
ISC
2N6302
功率
硅(Si)
NPN型
平面型
直插型
金属封装
相关产品
产品信息
·Excellent Safe Operating Area
·HighDC Current Gain-
: hFE=15-60@IC= 8A
·Low Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 10A
APPLICATIONS
·Designed for use in high power audio amplifier applications
and high voltage switching regulator circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SY*OL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 140 | V |
VCEO | Collector-Emitter Voltage | 140 | V |
VEBO | Emitter-Base Voltage | 7 | V |
IC | Collector Current-Continuous | 16 | A |
ICM | Collector Current-Peak | 20 | A |
IB | Base Current-Continuous | 5 | A |
PC | Collector Power Dissipation @TC=25℃ | 150 | W |
TJ | Junction Temperature | 200 | ℃ |
Tstg | Storage Temperature | -65~200 | ℃ |
THERMAL CHARA*ERISTICS
SY*OL | PARAMETER | MAX | UNIT |
Rth j-c | Thermal Resistance,Junction to Case | 0.875 | ℃/W |
ELE*RICAL CHARA*ERISTICS
TC=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | MAX | UNIT |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= 100mA; IB= 0 | 140 | V | |
VCE(sat)-1 | Collector-Emitter Saturation Voltage | IC= 10A; IB= 1A |
| 1.0 | V |
VCE(sat)-2 | Collector-Emitter Saturation Voltage | IC= 16A; IB= 4A |
| 2.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 10A; IB= 1A |
| 1.8 | V |
VBE(on) | Base-Emitter On Voltage | IC= 8A ; VCE= 4V |
| 1.5 | V |
ICEO | Collector Cutoff Current | VCE= 70V; IB= 0 |
| 2.0 | mA |
ICEV | Collector Cutoff Current | VCE= 140V; VBE(off)= 1.5V VCE= 140V; VBE(off)= 1.5V,TC=150℃ |
| 1.0 5.0 | mA |
ICBO | Collector Cutoff Current | VCB= 140V; IE= 0 |
| 1.0 | mA |
IEBO | Emitter Cutoff Current | VEB= 7V; IC= 0 |
| 1.0 | mA |
hFE-1 | DC Current Gain | IC= 8A ; VCE= 4V | 15 | 60 |
|
hFE-2 | DC Current Gain | IC= 16A ; VCE= 4V | 4 |
|
|
fT | Current Gain-Bandwidth Product | IC= 1A ; VCE= 10V; f= 1.0MHz | 0.2 |
| MHz |